#IRFL110TRPBF VISHAY IRFL110TRPBF New Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4, IRFL110TRPBF pictures, IRFL110TRPBF price, #IRFL110TRPBF supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/irfl110trpbf.html
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Manufacturer Part Number: IRFL110TRPBF
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: VISHAY INTERTECHNOLOGY INC
Part Package Code: TO-261AA
Package Description: SMALL OUTLINE, R-PDSO-G4
Pin Count: 4
ECCN Code: EAR99
Manufacturer: Vishay Intertechnologies
Risk Rank: 0.66
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 100 V
Drain Current-Max (Abs) (ID): 1.5 A
Drain Current-Max (ID): 1.5 A
Drain-source On Resistance-Max: 0.54 Ω
FET Technology: METAL-OXIDE Semiconductor
JEDEC-95 Code: TO-261AA
JESD-30 Code: R-PDSO-G4
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 4
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 3.1 W
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: VISHAY INTERTECHNOLOGY INC
Part Package Code: TO-261AA
Package Description: SMALL OUTLINE, R-PDSO-G4
Pin Count: 4
ECCN Code: EAR99
Manufacturer: Vishay Intertechnologies
Risk Rank: 0.66
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 100 V
Drain Current-Max (Abs) (ID): 1.5 A
Drain Current-Max (ID): 1.5 A
Drain-source On Resistance-Max: 0.54 Ω
FET Technology: METAL-OXIDE Semiconductor
JEDEC-95 Code: TO-261AA
JESD-30 Code: R-PDSO-G4
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 4
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 3.1 W
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4