EUPEC F4-100R06KL4 IGBT Module

F4-100R06KL4 IGBT Module Technical Overview

The F4-100R06KL4 is an insulated gate bipolar transistor (IGBT) module produced by
Infineon Technologies AG. Designed for applications requiring efficient switching and high current handling, this module features a robust construction suited for industrial environments.

Key Specifications

Parameter	Value
Manufacturer Part Number	F4-100R06KL4
Manufacturer	Infineon Technologies AG
Collector Current (IC)	100 A Maximum
Collector-Emitter Voltage (VCES)	600 V
Gate-Emitter Voltage (VGE)	20 V Maximum
Power Dissipation	430 W
Operating Temperature	up to 150 °C
ROHS Compliance	Yes
Package Type	MODULE-24 (Flange Mount)
Pin Count	24
Channel Type	N-Channel
ECCN Code	EAR99

The F4-100R06KL4 is categorized under Insulated Gate Bipolar Transistors, with a single element and a rectangular, flange-mount package. No surface mount option is specified, and the terminal position is on the upper side of the module, supporting robust electrical connections.

This IGBT module includes 24 terminals, adhering to the JESD-30 packaging code R-XUFM-X24. The risk rank is rated at 5.19, and the part life cycle code notes that it is currently not recommended for new designs.

Physical Construction and Application Considerations

The module uses a rectangular body shape with an unspecified body material, designed for flange mounting in applications demanding reliable power conversion. With an absolute maximum collector current of 100 A and a collector-emitter voltage threshold of 600 V, the device addresses medium- to high-power requirements.

No peak reflow temperature is specified, and the module has not received a formal qualification status. The product complies with ROHS standards.

Summary Table

Feature	Description
Subcategory	Insulated Gate Bipolar Transistor (IGBT)
Number of Elements	1
Surface Mount	No
Operating Temperature (Max)	150 °C
Terminal Form	Unspecified

Additional product information and technical documentation is available directly from SLW-ELE.