Expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R4A08QM, TK3R2A08QM, TK5R1A08QM, TK6R8A08QM, TK5R1P08QM, TK6R9P08QM
 Among products with the same rating, as of February, 2021. Toshiba survey.
 Compared with TK100E08N1 (U-MOSVIII-H series), TK2R4E08QM has reduced its "typical drain-source On-resistance × typical gate switch charge" by about 8 %.
- Industry’s lowest level On-resistance :
RDS(ON)=2.44 mΩ (max) ＠VGS=10 V (TK2R4E08QM)
- Low charge (output and gate switch)
- Low gate voltage drive (6 V drive)
- Switching power supplies for industrial equipment
(High efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
- Motor control equipment (Motor drivers, etc.)
(Unless otherwise specified, @Ta=25 °C)
Application Circuit Examples
Note: The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.