The FUJI IGBT module 1MBI600V-120 is a high-performance insulated-gate bipolar transistor (IGBT) module, designed and manufactured by FUJI Electric.
This module (1MBI600V-120) has a voltage rating of 600V and a maximum collector current of 120A, making it suitable for a wide range of high-power applications, including motor control, power supplies, and renewable energy systems.
The 1MBI600V-120 module comes with built-in protection features such as short-circuit protection and over-temperature protection.
Key Features:
- High-speed switching
- Voltage drive
- Low inductance module structure
Applications:
- Inverter for Motor Drive
- AC and DC Servo Drive Amplifier
- Uninterruptible Power Supply (UPS)
- Industrial machines, such as Welding machines
Maximum Ratings and Characteristics (Absolute Maximum Ratings at Tc=25°C unless otherwise specified):
- Collector-Emitter voltage (VCES): 1200V
- Gate-Emitter voltage (VGES): ±20V
- Collector current (Ic) pulse 1 ms: 600 A
- Collector current (Ic) pulse 1 ms: 1200 A
- Collector power dissipation (Pc) for 1 device: 3000 W
- Junction temperature (Tj): 175°C
- Operating junction temperature (under switching conditions) (Tjop): 150°C
- Case temperature (Tc): 125°C
- Storage temperature (Tstg): -40~+125°C
- Isolation voltage between terminal and copper base (*1): Viso AC: 1 min. 2500 VAC
- Screw torque for mounting (*2): M5 or M6, 6.0 N.m