The Fuji 6MBP150NA060 is an IGBT (Insulated Gate Bipolar Transistor) module with specific maximum ratings and characteristics. Here are the key specifications:
Absolute Maximum Ratings (Tc=25°C unless otherwise specified):
- Collector-Emitter Voltage (Vces): 600V – This is the maximum voltage the IGBT can handle between the collector and emitter.
- Gate-Emitter Voltage (VGES): ±20V – The maximum gate-emitter voltage allowed.
- Collector Current (Ic Continuous Tc=80°C): 150A – The maximum continuous collector current when the case temperature is 80°C.
- Collector Current (Icp 1ms Tc=80°C): 300A – The maximum collector current for a 1ms pulse when the case temperature is 80°C.
- Collector Power Dissipation (Pc): 595W – The maximum power dissipation the module can handle.
- Isolation Voltage (VIsol, AC 1 minute): 2500V – This is the isolation voltage between the input and output of the module for 1 minute.
- Operating Junction Temperature (Tj): +150°C – The recommended maximum operating junction temperature.
- Storage Temperature (Tstg): -40 to +125°C – The temperature range for storing the module when it’s not in use.
- Mounting Screw Torque: 3.5 N·m – The recommended torque for mounting screws.