INFINEON IPP90R1K0C3 in-Stock

#IPP90R1K0C3 INFINEON IPP90R1K0C3 Nova IPP90R1K0C3 Power Field-effectus Gallium, 5.7A I (D), 900V, 1ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, TO-220AB, VIRIDIS, Plastic, TO-220, 3 ACUS; IPP90R1K0C3 , IPP90R1K0C3 imagines, IPP90R1K0C3 pretium, # IPP90R1K0C3 elit.
-----------------------
Email: sales@shunlongwei.com

https://www.slw-ele.com/ipp90r1k0c3.html

-----------------------

Manufacturer Part Number: IPP90R1K0C3
Pbfree Code: Sic
Pars vitae Cycle Code: Non commendatur
Ihi Manufacturer: Infineon AG technologiae
Pars Package Code: TO-220AB
Sarcina Description: LABIUM MONTE, R-PSFM-T3
Pin Count: V
Manufacturer: Infineon Technologies AG
Risk Rank: 7.81
NIVIS NIVIS Energy Rating (Eas): 97 mJ
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 5.7 A
Exhaurire Current-Max (ID): 5.7 A
Exhaurire-fonte Resistentia-Max: 1 Ω
FET Technology: METAL-OXIDUM semiconductor
JEDEC-95 Codex: TO-220AB
JESD-30 Codex: R-PSFM-T3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 89 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Campo monte: No such
Terminatio forma: PER FORAMEN
Terminatio Position: Unam
Tempus
Potentia Field-Effectus Transistor, 5.7A I(D), 900V, 1ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, TO-220AB, VIRIDIS, Plastic, TO-220, 3 PIN