Microsemi Power Products Group APT25GR120SSCD10 in-Stock

Datasheets:APT25GR120(B,S)SCD10Standard Package:31Category:Discrete Gallium ProductsFamily:IGBTs - SingleSeries: -Packaging:TubeIGBT Type:NPTVoltage - Collector Emitter Breakdown (Max):1200VVce(on) (Max) @ Vge, IC:3.2V @ 15V, 25ACurrent - Collector (IC) (Max): 75 ACurrent - Collector Pulsus (Icm): 100 APOwer - Max:521WSwitching Energy:434µJ (on), 466µJ (off) Input Type: StandardGate Charge: 203nCTd (on/off) @ 25°C:16ns/122ns Test Condition :600V, 25A, 4.3 Ohm, 15VReverse Recovery Time (trr): -Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AAMounting Type:Surface MountSupplier Device Package:D3PakDynamic Catalog:Standard IGBTs #APT25GR120SSCD10 Microsemi Power Products Group APT25GR120SSCD10 Nova Porta Bipolar Insulated Gallium, 75A I(C), 1200V V(BR)CES, N-Channel,, APT25GR120SSCD10 imagines, APT25GR120SSCD10 pretium, #APT25GR120SSCD10 elit
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Manufacturer: Pars Number: APT25GR120SSCD10
Rohs Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: MICROSEMI CORP
Sarcina Description: ,
Manufacturer: Microsemi Corporation
Risk Rank: 5.83
Current Bibliotheca-Max (Ic): A MCCC
Collector-Emitte voltage-Max: M V
Porta-Emitte Thr voltage-Max: M V
Gate-Emitte Voltage-Max: 30 V
Temperature operating-Max CL ° F
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 521 W
Subcategoria: Porta BIP Transistores Insulated
Superficiem monte: ETIAM
Porta Bipolar Transistor insulata, 75A I(C), 1200V V(BR)CES, N-Channel,