Kumpulan Produk Daya Mikrosemi APT25GR120SSCD10 Dalam Stok

Datasheets:APT25GR120(B,S)SCD10Standard Package:31Category:Discrete Semikonduktor ProdukKeluarga:IGBTs – Siri Tunggal:-Pembungkusan:TubeIGBT Jenis:NPTVoltage – Pecahan Pemancar Pengumpul (Maks):1200VVce(on) (Maks) @ Vge, IC:3.2V @ 15V, 25ACurrent – ​​Pengumpul (IC) (Maks):75Arus – Berdenyutan Pengumpul (Icm):100Kuasa – Maks:521WSTenaga Suis:434µJ (hidup), 466µJ (mati)Jenis Input:Caj Gerbang Standard:203nCTd (hidup/mati) @ 25°C:16ns/122nsSest Condition :600V, 25A, 4.3 Ohm, 15VRMasa Pemulihan Terbalik (trr):-Pakej / Sarung:TO-268-3, D³Pak (2 Lead + Tab), TO-268AAMounting Type:Surface Mount Supplier Device Package:D3PakDynamic Catalog: #Standard IGBTsAPT25GR120SSCD10 Kumpulan Produk Tenaga Mikrosemi APT25GR120SSCD10 Pintu Bipolar Bertebat Baru Transistor, 75A I (C), 1200V V (BR) CES, N-Channel ,, gambar APT25GR120SSCD10, harga APT25GR120SSCD10, pembekal # APT25GR120SSCD10
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pengeluar Nombor Bahagian: APT25GR120SSCD10
Kod Rohs: Ya
Kod Kitaran Separuh Hayat: Usang
Pengilang Ihs: MICROSEMI CORP
Penerangan Pakej:,
Pengilang: Microsemi Corporation
Peringkat Risiko: 5.83
Pemungut Semasa-Maks (IC): 75 A
Pemungut-Pemancar voltan-Maks: 1200 V
Gerbang-Pemancar Thr voltan-Maks: 6.5 V
Voltan Pemancar Gerbang-Maks: 30 V
Suhu Operasi-Maks: 150 ° C
Polariti / Jenis Saluran: N-CHANNEL
Dissipation Kuasa-Maks (Abs): 521 W
Subkategori: Transistor BIP Pintu Bertebat
Lekapan Permukaan: YA
Transistor Bipolar Gate Insulated, 75A I (C), 1200V V (BR) CES, N-Channel,