#CM600YE2N-12F Mitsubishi CM600YE2N-12F New HVIGBT (High voltage Porta insulata Bipolar Gallium) moduli 1700V/600A/6200W, CM600YE2N-12F imagines, CM600YE2N-12F pretium, #CM600YE2N-12F supplementum
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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CM600YE2N-12F HVIGBT (High voltage Porta insulata Bipolar Gallium) Modules
MAXIMUM RATINGS (Tj = 25°C)
Collector-emittetor voltage VCES VGE = 0V 1700V
Porta emittere voltageVCES VCE = 0V±20V
Collector current IC 600A
Collector currentis ICM 1200A
Collector maximus dissipatio TC = 25°C; IGBT part 6200W
MAXIMUM RATINGS (Tj = 25°C)
Collector-emittetor voltage VCES VGE = 0V 1700V
Porta emittere voltageVCES VCE = 0V±20V
Collector current IC 600A
Collector currentis ICM 1200A
Collector maximus dissipatio TC = 25°C; IGBT part 6200W
Coniunctionis temperaturae Tj -40 ~ +150°C
Repono temperies Tstg -40 ~ +125°C
Solation voltage Procuratus ad laminam basin, rms, sinusoidales, AC 60Hz 1min.4000V
Typical valorem 1.5 kg
Typical valorem 1.5 kg
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Moduli 1700V/600A/6200W
Shunlongwei Inspeximus Omne CM600YE2N-12F Ante Navim, Omnia CM600YE2N-12F cum 6 mensibus warantia.