VISHAY IRFL110TRPBF In Stock

#IRFL110TRPBF VISHAY IRFL110TRPBF New Small signum Field-effectus Gallium, 1.5AI(D), 100V, 1-Element, N-Channel, Silicon, oxydatum metallicum Gallium FET, TO-261AA, ROHS OBEDIENS FASCICULUS-4, IRFL110TRPBF pretium, IRFL110TRPBF pretium, #IRFL110TRPBF supplementum
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Manufacturer Pars Number: IRFL110TRPBF
Pbfree Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: VISAY INTERTECHNOLOGY INC
Pars Package Code: TO-261AA
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G4
Pin Count: V
ECCN Code: EAR99
Manufacturer: Vishay Intertechnologiae
Risk Rank: 0.66
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 1.5 A
Exhaurire Current-Max (ID): 1.5 A
Exhaurire-fonte Resistentia-Max: 0.54 Ω
FET Technology: METAL-OXIDUM Gallium
JEDEC, XCV Code: TO-95AA
JESD-30 Codex: R-PDSO-G4
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Temperature-Min operating: -55 °C
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 3.1 W
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Small signum Field-Effectus Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, oxydatum Metallum. Gallium FET, TO-261AA, ROHS OBSEQUENS FASCICULUS-4