Datasheets:PD57002(S)-EProduct Photos:PowerSO-10RF (Straight Lead)Standard Package:50Category:Discrete Semiconductor ProductsFamily:RF FETsSeries:-Packaging:TubeTransistor Type:LDMOSFrequency:960MHzGain:15dBVoltage – Test:28VCurrent Rating:250mANoise Figure:-Current – Test:10mAPower – Output:2WVoltage – Rated:65VPackage / Case:PowerSO-10 Exposed Bottom PadSupplier Device Package:PowerSO-10RF (Straight Lead)Other Names:497-6718-5PD57002S-E-ND #PD57002S-E STMicroelectronics PD57002S-E New 2W 28V HF to 1GHz LDMOS Transistor in PSO-10RF plastic package, PD57002S-E pictures, PD57002S-E price, #PD57002S-E supplier
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Email: sales@shunlongwei.com
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Manufacturer Part Number: PD57002S-E
Brand Name: STMicroelectronics
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: STMICROELECTRONICS
Part Package Code: SOT
Package Description: PLASTIC, POWERSO-10RF, 2 PIN
Pin Count: 10
ECCN Code: EAR99
Manufacturer: STMicroelectronics
Risk Rank: 5.74
Additional Feature: HIGH RELIABILITY
Case Connection: SOURCE
Configuration: SINGLE
DS Breakdown voltage-Min: 65 V
Drain Current-Max (Abs) (ID): 0.25 A
Drain Current-Max (ID): 0.25 A
FET Technology: METAL-OXIDE Semiconductor
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
JESD-30 Code: R-PDSO-F2
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 165 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 4.75 W
Power Gain-Min (Gp): 15 dB
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: FLAT
Terminal Position: DUAL
Time
2W 28V HF to 1GHz LDMOS Transistor in PSO-10RF plastic package
Brand Name: STMicroelectronics
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: STMICROELECTRONICS
Part Package Code: SOT
Package Description: PLASTIC, POWERSO-10RF, 2 PIN
Pin Count: 10
ECCN Code: EAR99
Manufacturer: STMicroelectronics
Risk Rank: 5.74
Additional Feature: HIGH RELIABILITY
Case Connection: SOURCE
Configuration: SINGLE
DS Breakdown voltage-Min: 65 V
Drain Current-Max (Abs) (ID): 0.25 A
Drain Current-Max (ID): 0.25 A
FET Technology: METAL-OXIDE Semiconductor
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
JESD-30 Code: R-PDSO-F2
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 165 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 4.75 W
Power Gain-Min (Gp): 15 dB
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Form: FLAT
Terminal Position: DUAL
Time
2W 28V HF to 1GHz LDMOS Transistor in PSO-10RF plastic package