Semikron SKiM304GD12T4D IGBT Module: Advanced Power Performance The Semikron SKiM304GD12T4D IGBT module showcases cutting-edge features tailored for advanced power applications. Leveraging Trenchgate technology, this module offers exceptional performance in various scenarios. Its Vce(sat) with positive temperature coefficient ensures stable operation over temperature fluctuations, while its remarkable short-circuit capability adds to its versatility. Features Typical Applications […]
The Toshiba MG200H1AL2 is a robust IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching applications. Here’s a concise overview of its key features and specifications: Description: The MG200H1AL2 is a transistor module with a current rating of 200 Amps and a voltage rating of 450 Volts. It weighs 210 grams (approximately 0.46 lbs), […]
The Starpower GD200HFL120C2S IGBT Module is a high-performance power semiconductor device designed for efficient power switching and control. Here are the key details and features of the GD200HFL120C2S IGBT Module: General Description: The STARPOWER IGBT Power Module is engineered to provide ultra-low conduction losses and high short circuit ruggedness. It’s tailored for applications such as […]
The MDS MDS200A1600V is an IGBT module known for its features and specifications that make it suitable for various applications. Here are the details: Features: Maximum Ratings and Characteristics: The MDS200A1600V IGBT module is designed to provide efficient power switching and control capabilities. It is characterized by its high voltage and current handling capabilities, making […]
The Infineon DDB6U205N16L is an IGBT (Insulated Gate Bipolar Transistor) module with the following maximum ratings and characteristics: Please note that these values represent the absolute maximum ratings for the DDB6U205N16L IGBT module, and they are provided for proper operational and safety considerations in various applications.
The Infineon FF400R07KE4 is a 650 V, 400 A dual IGBT module manufactured by Infineon Technologies. This module features TRENCHSTOP™ IGBT4 technology along with an emitter controlled diode. It is designed for high-power applications that require increased blocking voltage capability, high short circuit capability, and optimal electrical performance. The module is housed in a standard […]
The Infineon FF400R06KE3 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-power switching applications. It comes with specific maximum ratings and characteristics that make it suitable for various industrial and power control applications. Here are the key specifications and features of the FF400R06KE3 IGBT module: Maximum Ratings and Characteristics: The FF400R06KE3 IGBT module […]
the Infineon #FZ400R17KE3 is essential for proper usage and to prevent damage or failure. Let’s go through each of the maximum ratings and characteristics of this component:
The Fuji 2MBI400VG-060 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high power applications that require high-speed switching and voltage drive capabilities. Below are the features, applications, and maximum ratings of this module: Features: Applications: Maximum Ratings (Tc=25°C unless otherwise specified):