BSM150GT120DN2(6) Video
vendere BSM150GT120DN2(6), Infineon BSM150GT120DN2 ( 6 ) New Stock, IGBT potestatem Module (Potestas solidabilis modulus 3-phasis plenus-pons Including ieiunium free-rotae diodes) 1200V 200A #BSM150GT120DN2(6)
Email: sales@shunlongwei.com
Infineon BSM150GT120DN2(6) est a potentia semiconductor moduli id est ad tractandum princeps potentia & summus voltage applications.
BSM150GT120DN2(6) modulus figurae dimidiae pontis est quae duos continet IGBT (Insulatae portae Bipolar Transistor) machinae quae possunt commutationes altas in frequentiis altas commutare. BSM150GT120DN2(6) habet aestimationem 1200V & rating currentis 150A, aptam ad systemata industriae industriae, & applicationes tractus.
SEMITOP 6 Involucrum huius moduli genus praebet facilem congregationem et inductionem humilem, usum idoneam ad applicationes mutandi summas frequentiae. Sarcina etiam conductivity scelerisque magna est, quae permittit ad dissipationem caloris efficientis.
BSM150GT120DN2(6) IGBT Power Module
Praevia notitia
. Virtus solidalis modulus III, tempus plenus-ponte
. Pellentesque libero rota comprehendo
. Package cum insulatas aliasque desidia metallum basi laminam
Maximum ratings
Collector-emissa intentione VCE 1200V
Collector-porta voltage RGE=20 KΩ
Porta-voltage EDITOR VGES: ± 20V
Collector current IC Continuus Tc=80°C : 150A
Collector current Icp 1ms Tc=80°C : 300A
Pulsus dissipatio Per IGBT Tc=25°C Ptot:1250W
Voltage VIsol (AC 1 minute): 2500V
Tj caliditas operating coniunctas: CL + F
Tstg repono temperatus: -40 ° C ad CXXV +
I N * 3.5 m · orantibus escendere suggestum stupra Bronze torque
Spatium 11 mm