Infineon BSM50GD120DN2E3226 Moduli Siliconis introducendo, genus productum ab Infineon, opificem celeberrimum, oblatum. Hi moduli cum hexametris configuratione designantur, praestantem praestationem variis applicationibus praestantem. Hic sunt notiones quaedam clavis producti:
Sales Email: sales@shunlongwei.com
- Manufacturer: Infineon
- Uber Numerus: IGBT Modules
- Collector-Emitte voltage (VCEO) Max: 1200V
- Collector-Eitter Saturationis voltage: 2.5v
- Continuus Collector Current ad 25° F: 50A
- Porta-Emitte Leakage Current: 200nA
- Potentia dissipatio (Pd): 350W
- Sarcina/Case: EconoPACK 2
- Maximum Operating Temperature: CXXV°C
- Packaging: Tray
- Altitudinis: 17mm
- Length: 107.5mm
- Technology: Si (Pii)
- Width: 45.5mm
- Adscendens Style: Mons Chassis
- Maxime Porta Emitte intentione: 20V
Haec N-CH (N-alveum) IGBT moduli sunt idonei ad amplis applicationibus quae altam potentiam requirunt et facultatem mutandi efficientes.