Datasheets: IRF9317PBFProduct Photos:8-SOIC8-SOIC8-SOICProduct Training ModulesHigh voltage Integrated Circuits (HVIC Gate Coegi) Design Resources: IRF9317PBF Saber ModelIRF9317PBF Spice ModelPCN Conventus / Origin:mosfet Backend Wafer Processing 23/Oct/2013Standard Package:4,000Category:Discrete Gallium ProductsFamily:FETs - SingleSeries: HEXFET®Packaging: Tape & Reel (TR)FET Type:mosfet P-Channel, Metal OxideFET Feature:Logic GateDrain ad Source voltage (Vdss):30Vurrent - Continua Drain (Id) @ 25° F:16A (Ta)Rds On (Max) @ Id, Vgs:6.6 mOhm @ 16A, 10VVgs(th) (Max) @ Id:2.4V @ 50µAGate Charge (Qg) @ Vgs:92nC @ 10VInput Capacitance (Ciss) @ Vds:2820pF @ 15VPower – Max:2.5WMounting Type: Superface MountPackage / Case:8-SOIC (0.154″, 3.90mm Width) Supplier Fabrica Package:8-SODynamic Catalog :P-Channel Logic Level Gate FETsOther Names:IRF9317TRPBFTR #IRF9317TRPBF Internationalis Rectifier IRF9317TRPBF Nova Power Field-Effectus Gallium, 16A I (D), 30V, 0.0066ohm, I-Element, P-Channel, Silicon, Metal-Oxid. Gallium FET, ROHS OBSEQUENS, SOP-8, IRF9317TRPBF pretium, IRF9317TRPBF pretium, # IRF9317TRPBF elit.
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Email: [inscriptio protected]
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Email: [inscriptio protected]
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Manufacturer Pars Number: IRF9317TRPBF
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 1.07
Power Field-Effect Transistor, 16A I (D), 30V, 0.0066ohm, 1-Element, P-Channel, Silicon, Metal-Oxid. Gallium FET, ROHS OBSEQUENS, SOP-8
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 1.07
Power Field-Effect Transistor, 16A I (D), 30V, 0.0066ohm, 1-Element, P-Channel, Silicon, Metal-Oxid. Gallium FET, ROHS OBSEQUENS, SOP-8