#IRF4104 IR IRF4104 Novae Power Field-Effectus Gallium, 75A I (D), 40V, 0.0055ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, TO-220AB, PLASTIC PACKAGE-3, IRF4104 imagines, IRF4104 pretium, # IRF4104 elit.
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Email: [inscriptio protected]
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Email: [inscriptio protected]
https://www.slw-ele.com/irf4104.html
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Manufacturer Pars Number: IRF4104
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Sarcina Description: LABIUM MONTE, R-PSFM-T3
Manufacturer: Infineon Technologies AG
Risk Rank: 5.65
Additional Feature: AVALANCHE RATED, SUMMA FIDE, ULTRA-GRAVIS RESISTENTIA
NIVIS NIVIS Energy Rating (Eas): 220 mJ
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 75 A
Exhaurire-fonte Resistentia-Max: 0.0055 Ω
FET Technology: METAL-OXIDUM Gallium
JEDEC-95 Codex: TO-220AB
JESD-30 Codex: R-PSFM-T3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Campo monte: No such
Terminatio forma: PER FORAMEN
Terminatio Position: Unam
Tempus
Potentia Field-Effectus Transistor, 75A I(D), 40V, 0.0055ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, TO-220AB, Plastic PACKAGE-3
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Sarcina Description: LABIUM MONTE, R-PSFM-T3
Manufacturer: Infineon Technologies AG
Risk Rank: 5.65
Additional Feature: AVALANCHE RATED, SUMMA FIDE, ULTRA-GRAVIS RESISTENTIA
NIVIS NIVIS Energy Rating (Eas): 220 mJ
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 75 A
Exhaurire-fonte Resistentia-Max: 0.0055 Ω
FET Technology: METAL-OXIDUM Gallium
JEDEC-95 Codex: TO-220AB
JESD-30 Codex: R-PSFM-T3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Campo monte: No such
Terminatio forma: PER FORAMEN
Terminatio Position: Unam
Tempus
Potentia Field-Effectus Transistor, 75A I(D), 40V, 0.0055ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, TO-220AB, Plastic PACKAGE-3