Mitsubishi PM50CSE120 In-Stock

#PM50CSE120 Renault Vel Satis PM50CSE120 New PM50CSE120 IGBT Module Dual 100A/1000V; , PM50CSE120 imagines, PM50CSE120 pretium, #PM50CSE120 elit
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Email: sales@shunlongwei.com -----------------------

PM50CSE120 FEATURE
a) Adoptatione nova 4th generationis planae IGBT chip, quod per-formance melioratur per 1μm subtilis processus regulae.b) Novo Diode utens, quod ad notas inveniendas molliendas destinatur.
•3φ 50A, 1200V Current-sensum IGBT pro 15kHz mutandi
• Monolithic portae coegi & praesidium logicae
• Detectio, tutela & status indication circuitus pro currenti, brevis-circuit, Plus-caliditas & intellectusvoltage
• acusticus strepitus-minus 5.5/7.5kW applicationis classis inverti
Maximum ratings et habitudines, 
.Absolute maximum ratings (T = sine nisi certa XXV ° C)
Collector-Emitte voltage Vces: 1200V
Porta-voltage EDITOR VGES: ± 20V
Collector current IC: 50A
Bibliotheca current Icp: 100A
Crapula virtutem collectori Pc: 328W
Bibliotheca-voltage EDITOR VCES: 2500V
Tj caliditas operating coniunctas: CL + F
Tstg repono temperatus: -40 ° C ad CXXV +
I N * 3.5 m · orantibus escendere suggestum stupra Bronze torque