#BUK553-100B PHI BUK553-100B Novae Potestatis Field-Effectus Gallium, N-channel, Metal-oxide Gallium FET,, BUK553-100B imagines, BUK553-100B pretium, # BUK553-100B elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/buk553-100b.html
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Manufacturer Part Number: BUK553-100B
Rohs Code: No
Pars Vita Cycle Code: Transferred
Ihi Manufacturer: PHILIPS SEMICONDUCTORS
Sarcina Description: ,
Manufacturer: Philips Semiconductors
Risk Rank: 5.82
Configurationis: Album
Exhaurire Current-Max (Abs) (ID): 12 A
FET Technology: METAL-OXIDUM Gallium
JESD-609 Codex: e0
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 75 W
Subcategoria: FET Generalis Propositum Power
Campo monte: No such
Terminatio Perago: plumbum / plumbum (Sn / Pb)
Power Field-Effectus Transistor, N-Channel, Metal-oxide Gallium FET,
Rohs Code: No
Pars Vita Cycle Code: Transferred
Ihi Manufacturer: PHILIPS SEMICONDUCTORS
Sarcina Description: ,
Manufacturer: Philips Semiconductors
Risk Rank: 5.82
Configurationis: Album
Exhaurire Current-Max (Abs) (ID): 12 A
FET Technology: METAL-OXIDUM Gallium
JESD-609 Codex: e0
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 75 W
Subcategoria: FET Generalis Propositum Power
Campo monte: No such
Terminatio Perago: plumbum / plumbum (Sn / Pb)
Power Field-Effectus Transistor, N-Channel, Metal-oxide Gallium FET,