#RQ3E150BN ROHM RQ3E150BN Novae Potestatis Field-Effectus Gallium, 15A I (D), 30V, 0.0074ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, HALOGENE LIBERI ET ROHS OBEDIENS, HSMT8, 8 ACUS, RQ3E150BN picturae, RQ3E150BN pretium, #RQ3E150BN elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/rq3e150bn.html
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Manufacturer Part Number: RQ3E150BNTB
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: ROHM CO LTD
Sarcina Description: PAULLULUM FORMULA, R-PDSO-F5
ECCN Code: EAR99
Manufacturer: ROHM Gallium
Risk Rank: 1.65
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 15 A
Exhaurire-fonte Resistentia-Max: 0.0074 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
JESD-30 Codex: R-PDSO-F5
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Sarcina Corpus Material: Plastic / EPOXY
Sarcina Figura: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Superficiem monte: ETIAM
Terminatio forma: FLAT
Terminatio Position: DUPLEX
Tempus
Potentia Field-Effectus Transistor, 15A I(D), 30V, 0.0074ohm, 1-Element, N-canale, Silicon, oxydatum Metallicum semiconductor FET, HALOGENE LIBERUM ET ROHS PLACENS, HSMT8, 8 ACUS
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: ROHM CO LTD
Sarcina Description: PAULLULUM FORMULA, R-PDSO-F5
ECCN Code: EAR99
Manufacturer: ROHM Gallium
Risk Rank: 1.65
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 15 A
Exhaurire-fonte Resistentia-Max: 0.0074 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
JESD-30 Codex: R-PDSO-F5
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Sarcina Corpus Material: Plastic / EPOXY
Sarcina Figura: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Superficiem monte: ETIAM
Terminatio forma: FLAT
Terminatio Position: DUPLEX
Tempus
Potentia Field-Effectus Transistor, 15A I(D), 30V, 0.0074ohm, 1-Element, N-canale, Silicon, oxydatum Metallicum semiconductor FET, HALOGENE LIBERUM ET ROHS PLACENS, HSMT8, 8 ACUS