#RSU002N06 ROHM RSU002N06 Novum Small Signum Field-Effectus Gallium, 0.25AI(D), 60V, 1-Element, N-Channel, Silicon, oxydatum metallicum Gallium FET, UMT3, SC-70, 3 ACUS, RSU002N06 imagines, RSU002N06 pretium, #RSU002N06 elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/rsu002n06.html
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Manufacturer Part Number: RSU002N06T106
Pbfree Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: ROHM CO LTD
Pars Package Code: SC-70
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G3
Pin Count: V
ECCN Code: EAR99
Manufacturer: ROHM Gallium
Risk Rank: 8.02
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 0.25 A
Exhaurire Current-Max (ID): 0.25 A
Exhaurire-fonte Resistentia-Max: 3.2 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
JESD-30 Codex: R-PDSO-G3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 0.2 W
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Small signum Field-Effectus Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, oxydatum Metallum. Gallium FET, UMT3, SC 70, 3 PIN .
Pbfree Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: ROHM CO LTD
Pars Package Code: SC-70
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G3
Pin Count: V
ECCN Code: EAR99
Manufacturer: ROHM Gallium
Risk Rank: 8.02
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 0.25 A
Exhaurire Current-Max (ID): 0.25 A
Exhaurire-fonte Resistentia-Max: 3.2 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
JESD-30 Codex: R-PDSO-G3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 0.2 W
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Small signum Field-Effectus Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, oxydatum Metallum. Gallium FET, UMT3, SC 70, 3 PIN .