Toshiba TPH2R306NH In-Stock

#TPH2R306NH Toshiba TPH2R306NH New TPH2R306NH Gallium POTESTAS, FET, FET Propositum Generale Potestas; TPH2R306NH , TPH2R306NH imagines, TPH2R306NH pretium, #TPH2R306NH elit.
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METAL-OXIDUM semiconductor
JESD-30 Codex: S-PDSO-F5
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Sarcina Corpus Material: Plastic / EPOXY
Sarcina Figura: QUADRA
Sarcina Style: PAULLULUM
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Superficiem monte: ETIAM
Terminatio forma: FLAT
Terminatio Position: DUPLEX
Gallium Applicationem: SWITCHING
Gallium Element Material: SILICON
Gallium POTESTAS, FET, FET General Propositum Power