VISHAY SI7445DP-T1-E3 In Stock

#SI7445DP-T1-E3 VISHAY SI7445DP-T1-E3 Novae Potestatis Field-Effectus Gallium, 12AI(D), 20V, 0.0077ohm, 1-Element, P-Channel, Silicon, oxydatum metallicum. Gallium FET, ROHS OBSEQUENS, INDUCTUS, POWERPAK, SOP-8, SI7445DP-T1-E3 imagines, SI7445DP-T1-E3 pretium, #SI7445DP-T1-E3 elit.
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Manufacturer Part Number: SI7445DP-T1-E3
Rohs Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: VISHAY SILICONIX
Pars Package Code: SOT
Sarcina Description: PAULLULUM FORMULA, R-XDSO-C5
Pin Count: V
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.81
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 12 A
Exhaurire-fonte Resistentia-Max: 0.0077 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-XDSO-C5
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Corpus sarcina Material: Omnes Diuini
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: P-CHNAL
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio Perago: Matte TIN
Terminatio forma: C BEND
Terminatio Position: DUPLEX
Tempus
Potestas Field-Effectus Transistor, 12AI(D), 20V, 0.0077ohm, I-Element, P-Channel, Silicon, oxydatum Metallum. Gallium FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8