“Mitsubishi CM800DU-12H IGBT Module: Specifications, Features, and Performance Details for High-Power Applications”
CM800DU-12H Specifications:
- Junction Temperature (Tj): -40 to 150°C
- Storage Temperature (Tstg): -40 to 125°C
- Collector-Emitter Voltage (G-E SHORT) (VCES): 600 Volts
- Gate-Emitter Voltage (C-E SHORT) (VGES): ±20 Volts
- Collector Current (Tc = 25°C) (IC): 800 Amperes
- Peak Collector Current (ICM): 1600* Amperes
- Emitter Current (Tc = 25°C) (IE): 800 Amperes
- Peak Emitter Current (IEM): 1600* Amperes
- Maximum Collector Dissipation (Tc = 25°C, Tj≤ 150°C) (Pc): 1500 Watts
- Mounting Torque, M8 Main Terminal: 95 in-lb
- Mounting Torque, M6 Mounting: 40 in-lb
- G(E) Terminal, M4: 15 in-lb
- Weight: 1200 Grams
- Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) (Viso): 2500 Volts