#BSM200GB120DN2 EUPEC BSM200GB120DN2 New 2IGBT: 200A1200V; IGBT Modules 1200V 200A DUAL , BSM200GB120DN2 pictures, BSM200GB120DN2 price, #BSM200GB120DN2 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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BSM200GB120DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter voltage VCEO Max: 1200 V
Collector-Emitter Saturation voltage: 2.5 V
Continuous Collector Current at 25 C: 290 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1.4 kW
Package / Case: Half Bridge2
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
2IGBT: 200A1200V; IGBT Modules 1200V 200A DUAL
Shunlongwei Inspected Every BSM200GB120DN2 Before Ship, All BSM200GB120DN2 with 6 months warranty.