#FQA10N80C FCS FQA10N80C Novae potestatis mosfet, N-Channel, QFET®, 800 V, 10 A, 1.1 Ω, TO-3P, TO-3PN 3L, 450-TUBE, FQA10N80C pretium, FQA10N80C pretium, #FQA10N80C elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Pars Number: FQA10N80C-F109
Notam nomen: ON Gallium
Pbfree Code: Active
Ihi Manufacturer: DE SEMICONDUCTOR
Sarcina Description: ROHS OBEDIENS, TO-3PN, ACUS III
Manufacturer Package Code: 340BZ
Manufacturer: DE Gallium
Risk Rank: 2.06
Configurationis: Album
Exhaurire Current-Max (Abs) (ID): 10 A
FET Technology: METAL-OXIDUM Gallium
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Verticitatem / Channel Type: N-CURSUS
potestatem Dissipatio-Max (Abs): 240 W
Subcategoria: FET Generalis Propositum Power
Campo monte: No such
potestatem mosfet, N-Channel, QFET®, 800 V, 10 A, 1.1 Ω, TO-3P, TO-3PN 3L, 450-TUBE
Notam nomen: ON Gallium
Pbfree Code: Active
Ihi Manufacturer: DE SEMICONDUCTOR
Sarcina Description: ROHS OBEDIENS, TO-3PN, ACUS III
Manufacturer Package Code: 340BZ
Manufacturer: DE Gallium
Risk Rank: 2.06
Configurationis: Album
Exhaurire Current-Max (Abs) (ID): 10 A
FET Technology: METAL-OXIDUM Gallium
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Verticitatem / Channel Type: N-CURSUS
potestatem Dissipatio-Max (Abs): 240 W
Subcategoria: FET Generalis Propositum Power
Campo monte: No such
potestatem mosfet, N-Channel, QFET®, 800 V, 10 A, 1.1 Ω, TO-3P, TO-3PN 3L, 450-TUBE