#SP, 11-01 fis SP-11-01 Novus BSP110 - N alveus TrenchMOS gradus intermedii FET SC-73 4-pinus, SP-11-01 imagines, SP-11-01 pretium, #SP-11-01 elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/sp-11-01.html
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Manufacturer Part Number: BSP110,115
Nomen notam: NXP Gallium
Rohs Code: Sic
Pars Vita Cycle Code: Transferred
Ihi Manufacturer: NXP SEMICONDUCTORS
Pars Package Code: SC-73
Sarcina Description: SOT-223, 4 PIN
Pin Count: V
Package fabrica Code: SOT223
ECCN Code: EAR99
HTS Code: 8541.29.00.75
Manufacturer: NXP Semiconductors
Risk Rank: 6.96
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 0.325 A
Exhaurire Current-Max (ID): 0.325 A
Exhaurire-fonte Resistentia-Max: 7 Ω
FET Technology: METAL-OXIDUM Gallium
Feedback Cap-Max (Crss): 6 pF
JESD-30 Codex: R-PDSO-G4
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 1.5 W
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Perago: plumbi (Sn)
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
BSP110 - N-alveus TrenchMOS gradus intermedius FET SC-73 4-Pin
Nomen notam: NXP Gallium
Rohs Code: Sic
Pars Vita Cycle Code: Transferred
Ihi Manufacturer: NXP SEMICONDUCTORS
Pars Package Code: SC-73
Sarcina Description: SOT-223, 4 PIN
Pin Count: V
Package fabrica Code: SOT223
ECCN Code: EAR99
HTS Code: 8541.29.00.75
Manufacturer: NXP Semiconductors
Risk Rank: 6.96
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 0.325 A
Exhaurire Current-Max (ID): 0.325 A
Exhaurire-fonte Resistentia-Max: 7 Ω
FET Technology: METAL-OXIDUM Gallium
Feedback Cap-Max (Crss): 6 pF
JESD-30 Codex: R-PDSO-G4
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 1.5 W
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Perago: plumbi (Sn)
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
BSP110 - N-alveus TrenchMOS gradus intermedius FET SC-73 4-Pin