Infineon BSM50GD120DN2E3226 In-Stock

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Email: sales@shunlongwei.com

https://www.slw-ele.com/bsm50gd120dn2e3226.html

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Manufacturer: Infineon

Uber Numerus:IGBT Modules

Product:IGBT Pii Modules

Configurationis: Hex

Collector- Emitte voltage VCEO Max:1200 V

Collector-Eitter Saturationis voltage2.5:XNUMX V

Continua Collector Current ad 25 C: 50 A

Porta-Emitte Leakage Current: 200 nA

Pd - Power Dissipation: MMMCL W

Sarcina / Case: EconoPACK II

Maximum Operating Temperature: + 150 C

Packaging: Tray

Altitudo:17 mm

Longitudo: 107.5 mm

Technology:Si

Width: CLXXXV mm

Brand: Infineon Technologies

Adscendens Style: Mons Chassis

Maxime Gate Emitte intentione: 20 V

IGBT Modules N-CH 1.2KV 50A

Shunlongwei Inspeximus Omnem BSM50GD120DN2E3226 Ante Navim, Omnes BSM50GD120DN2E3226 cum VI mensibus warantum.