IOR IRF7473TR In Stock

#IRF7473TR IOR IRF7473TR Nova Power Field-Effectus Gallium, 6.9A I (D), 100V, 0.026ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, MS-012AA, SO-8, IRF7473TR imagines, IRF7473TR pretium, # IRF7473TR elit.
-----------------------
Email: sales@shunlongwei.com

https://www.slw-ele.com/irf7473tr.html

-----------------------

Manufacturer Pars Number: IRF7473TR
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.17
NIVIS NIVIS Energy Rating (Eas): 140 mJ
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 6.9 A
Exhaurire-fonte Resistentia-Max: 0.026 Ω
FET Technology: METAL-OXIDUM Gallium
JEDEC-95 Codex: MS-012AA
JESD-30 Codex: R-PDSO-G8
JESD-609 Codex: e3
Humorem sensitivum Level: 2
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio Perago: Matte TIN
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Potentia Field-Effectus Transistor, 6.9A I(D), 100V, 0.026ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, MS-012AA, SO-8