DE Semiconductor NTMS5835NLR2G In-Stock

#NTMS5835NLR2G ON Gallium NTMS5835NLR2G Novae NTMS5835NLR2G Power mosfet 40V 12A 10 mOhm Single N-Channel SO-8 Logicum Graduum, SOIC-8 Corpus Angustum, 2500-REEL; NTMS5835NLR2G , NTMS5835NLR2G imagines, NTMS5835NLR2G pretium, #NTMS5835NLR2G elit.
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Manufacturer Pars Number: NTMS5835NLR2G
Notam nomen: ON Gallium
Pbfree Code: Obsolete
Ihi Manufacturer: DE SEMICONDUCTOR
Pars Package Code: SOT
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G8
Pin Count: V
Package fabrica Code: 751-07
ECCN Code: EAR99
Manufacturer: DE Semiconductor
Risk Rank: 7.8
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 12 A
Exhaurire Current-Max (ID): 9.2 A
Exhaurire-fonte Resistentia-Max: 0.014 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
JESD-30 Codex: R-PDSO-G8
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 2.6 W
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Perago: plumbi (Sn)
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
potestatem MOSFET 40V 12A 10 mOhm Single N-Channel SO-8 Logicum Graduum, SOIC-8 Corpus Angustum, 2500-REEL