#BUZ305 ST BUZ305 Novae Power Field-Effectus Gallium, 7.5A I (D), 800V, 1ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, TO-218, TO-218AB, 3 ACUS, BUZ305 imagines, BUZ305 pretium, # BUZ305 elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/buz305.html
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Manufacturer Pars Number: BUZ305
Pars Vita Cycle Code: Transferred
Ihi Manufacturer: SIEMENS AG
Pars Package Code: TO-218
Sarcina Description: LABIUM MONTE, R-PSFM-T3
Pin Count: V
Manufacturer: Siemens
Risk Rank: 5.24
NIVIS NIVIS Energy Rating (Eas): 830 mJ
Configurationis: Unam
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 7.5 A
Exhaurire-fonte Resistentia-Max: 1 Ω
FET Technology: METAL-OXIDUM Gallium
Feedback Cap-Max (Crss): 140 pF
JEDEC-95 Codex: TO-218
JESD-30 Codex: R-PSFM-T3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Verticitatem / Channel Type: N-CURSUS
Potestas dissolutionis Ambient-Max: 150 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Campo monte: No such
Terminatio forma: PER FORAMEN
Terminatio Position: Unam
Gallium Applicationem: SWITCHING
Gallium Element Material: SILICON
Turn-off Time-Max (toff): 690 ns
Turn-on Time-Max (ton): 205 ns
Potentia Field-Effectus Transistor, 7.5A I(D), 800V, 1ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, TO-218, TO-218AB, 3 PIN .
Pars Vita Cycle Code: Transferred
Ihi Manufacturer: SIEMENS AG
Pars Package Code: TO-218
Sarcina Description: LABIUM MONTE, R-PSFM-T3
Pin Count: V
Manufacturer: Siemens
Risk Rank: 5.24
NIVIS NIVIS Energy Rating (Eas): 830 mJ
Configurationis: Unam
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 7.5 A
Exhaurire-fonte Resistentia-Max: 1 Ω
FET Technology: METAL-OXIDUM Gallium
Feedback Cap-Max (Crss): 140 pF
JEDEC-95 Codex: TO-218
JESD-30 Codex: R-PSFM-T3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Verticitatem / Channel Type: N-CURSUS
Potestas dissolutionis Ambient-Max: 150 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Campo monte: No such
Terminatio forma: PER FORAMEN
Terminatio Position: Unam
Gallium Applicationem: SWITCHING
Gallium Element Material: SILICON
Turn-off Time-Max (toff): 690 ns
Turn-on Time-Max (ton): 205 ns
Potentia Field-Effectus Transistor, 7.5A I(D), 800V, 1ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, TO-218, TO-218AB, 3 PIN .