#STD13NM60N-H ST STD13NM60N-H New Gallium,mosfet, N-CHANEL,600V V(BR)DSS,11A I(D),TO-252AA, STD13NM60N-H imagines, STD13NM60N-H pretium, #STD13NM60N-H elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/std13nm60n-h.html
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Manufacturer Part Number: STD13NM60N-H
Rohs Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: STMICROELECTRONICS
Manufacturer: STMicroelectronscs
Risk Rank: 5.84
Configurationis: Album
Exhaurire Current-Max (Abs) (ID): 11 A
FET Technology: METAL-OXIDUM Gallium
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 90 W
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Finis: Matte Tin (Sn) - annealed
Gallium,mosfet,N-CHANEL,600V V(BR)DSS,11A I(D),TO-252AA
Rohs Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: STMICROELECTRONICS
Manufacturer: STMicroelectronscs
Risk Rank: 5.84
Configurationis: Album
Exhaurire Current-Max (Abs) (ID): 11 A
FET Technology: METAL-OXIDUM Gallium
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 90 W
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Finis: Matte Tin (Sn) - annealed
Gallium,mosfet,N-CHANEL,600V V(BR)DSS,11A I(D),TO-252AA