Vishay Siliconix SI4532ADY-T1-GE3 In-Stock

#SI4532ADY-T1-GE3 Vishay Siliconix SI4532ADY-T1-GE3 Novum SI4532ADY-T1-GE3 Signum parvum Field-Effectus Gallium, 3.7AI(D), 30V, 2-Element, N-Channel et P-Canale, Silicon, oxydatum Metallum. Gallium FET, HALOGEN LIBERI ET ROHS OBEDIENS, SOP-8; SI4532ADY-T1-GE3 , SI4532ADY-T1-GE3 imagines, SI4532ADY-T1-GE3 pretium, #SI4532ADY-T1-GE3 elit
-----------------------
Email: sales@shunlongwei.com

https://www.slw-ele.com/si4532ady-t1-ge3.html

-----------------------

Manufacturer Part Number: SI4532ADY-T1-GE3
Pbfree Code: Sic
Pars Vita Cycle Code: Transferred
Ihi Manufacturer: VISHAY SILICONIX
Pars Package Code: SOT
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G8
Pin Count: V
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 5.14
Configurationis: SEPARATUS, 2 elementa inaedificata in Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 3.7 A
Exhaurire-fonte Resistentia-Max: 0.053 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
JESD-30 Codex: R-PDSO-G8
JESD-609 Codex: e3
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CIVUS AND P-CHR
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio Perago: Matte TIN
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Small signum campi-Effectus Transistor, 3.7A I(D), 30V, 2-Element, N-Channel et P-Channel, Silicon, oxydatum Metallicum Semiconductoris FET, HALOGEN LIBERUM ET ROHS PLACENS, SOP-8