Sales Email: sales@shunlongwei.com Description: Infineon IGBT MOD™ Modules are specifically engineered for high frequency applications, supporting 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module comprises a half-bridge configuration featuring two IGBT Transistors, with each Transistor equipped with a reverse-connected super-fast recovery free-wheel diode. The design ensures […]
Infineon #FZ600R12KE3 Description Sales Email: sales@shunlongwei.com Brand: Infineon Technologies AGVces: 1,200 Volts DCIC: 600 AmpsVges +/-: ±20Ices Max: 5 MilliAmpsIges Max: 0.4 MicroAmpsVge(th) Min/Max: 6.5 VoltsVce(sat) Max: 2.15 VoltsHeight (mm): 36.5Width (mm): 106.4Depth (mm): 61.4circuit Type: Single IGBTH x W x D (in.): 1.44 x 4.19 x 2.42 The Infineon #FZ600R12KE3 is a high-quality power […]
The Fuji 1DI300ZN-120 is a new IGBT module manufactured by Fuji Electric. It is designed for high-power applications and offers reliable performance. Here are some key features of the 1DI300ZN-120 IGBT module: Sales Email: sales@shunlongwei.com High Power Handling: The module is capable of handling a maximum collector current (IC) of 300 A, making it suitable […]
Sales Email: sales@shunlongwei.com Manufacturer: Infineon Product Category: IGBT Modules RoHS: Yes Product: IGBT Silicon Modules Maximum Ratings and Characteristics: Absolute maximum ratings (Tc=25°C unless specified otherwise) Collector-Emitter voltage: 1200 V (at Tvj = 25°C, VCES) Continuous DC Collector Current: 50 A (TC = 100°C, Tvj max = 175°C, IC nom) Repetitive Peak Collector Current: 100 […]
Sales Email: sales@shunlongwei.com Manufacturer Part Number: 1DI300ZN-120Package Description: Flange Mount, R-PUFM-X5Manufacturer: FujiCollector Current-Max (IC): 300 ACollector-Emitter voltage-Max: 1200 VConfiguration: Darlington, 3 transistors with built-in diode and ResistorDC Current Gain-Min (hFE): 100Fall Time-Max (tf): 2000 nsJESD-30 Code: R-PUFM-X5Number of Elements: 1Number of Terminals: 5Package Body Material: Plastic/EpoxyPackage Shape: RectangularPackage Style: Flange MountPolarity/Channel Type: NPNPower Dissipation Ambient-Max: […]
#SKiiP83ANB15T5 Semikron SKiiP83ANB15T5 New IGBT 1200V/125A, SKiiP83ANB15T5 pictures, SKiiP83ANB15T5 price, #SKiiP83ANB15T5 supplier ——————————————————————- Email: sales@shunlongwei.com https://www.slw-ele.com/skiip83anb15t5.html ——————————————————————- SKiiP83ANB15T5 Maximum ratings and characteristics .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:1200V Gate-Emitter voltage VGES:±20V Collector current IC:85A Collector current Icp:250A Collector power dissipation Pc:250W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg […]
The Fuji 2MBI200VB-120 is a new IGBT module offered by Fuji Electric. It belongs to the V series of IGBT modules and features a voltage rating of 1200V and a current rating of 200A. The module is designed with a compact structure that combines two IGBTs in a single package, providing high power density. Features […]
The Mitsubishi PM75CSE120 features:a) Utilizes a new 4th generation planar IGBT chip with enhanced performance through a 1μm fine rule process.b) Incorporates a new diode designed to achieve soft reverse-recovery characteristics. Sales Email: sales@shunlongwei.com Key Specifications: Maximum Ratings and Characteristics:
#FZ400R12KS4 Infineon FZ400R12KS4 New 400A/1200V/IGBT/1U, FZ400R12KS4 pictures, FZ400R12KS4 price, #FZ400R12KS4 supplier ——————————————————————- Email: sales@shunlongwei.com https://www.slw-ele.com/fz400r12ks4.html ——————————————————————- FZ400R12KS4 Description Brand: Infineon Technologies AG Vces: 1,200 Volts DC IC: 400 Amps Vges +/-: ±20 Ices Max: 5 MilliAmps Iges Max: 0.4 MicroAmps Vge(th) Min/Max: 6.5 Volts Vce(sat) Max: 3.7 Volts Height (mm): 36.5 Width (mm): 106.4 Depth […]