Fuji #7MBP75RE120 Power Module Features Absolute Maximum Ratings: Collector-Emitter Voltage (Vces): 1200V Gate-Emitter Voltage (VGES): ±20V Collector Current (Ic): 75A Collector Current Peak (Icp): 150A Collector Power Dissipation (Pc): 500W Collector-Emitter Voltage (VCES): 2500V Operating Junction Temperature (Tj): +150°C Storage Temperature (Tstg): -40 to +125°C Mechanical Characteristics: Mounting M5 Screw Torque: 2.5~3.5*6 N·m Weight (Typical): […]
“Mitsubishi CM800DU-12H IGBT Module: Specifications, Features, and Performance Details for High-Power Applications” CM800DU-12H Specifications:
Infineon’s DD260N18KHPSA1 IGBT Module boasts a range of cutting-edge features designed to ensure high reliability and optimal performance. Leveraging Pressure Contact Technology, this module excels in robustness. The implementation of Advanced Medium Power Technology (AMPT) further enhances its capabilities, making it a reliable choice in various industrial applications. The module adheres to industrial standards and […]
The FUJI IGBT module 1MBI600V-120 is a high-performance insulated-gate bipolar transistor (IGBT) module, designed and manufactured by FUJI Electric. This module (1MBI600V-120) has a voltage rating of 600V and a maximum collector current of 120A, making it suitable for a wide range of high-power applications, including motor control, power supplies, and renewable energy systems. The […]
December 19, 2023 — Infineon Technologies AG has recently launched its 4.5 kV XHP™ 3 IGBT modules that will fundamentally change the landscape of medium voltage drives (MVD) and transportation applications from 2000 to 3300 V AC in Level 2 and Level 3 topologies. Applications that benefit from the new module include large conveyors, pumps, […]
The Infineon FP50R12W2T7_B11 is an IGBT (Insulated Gate Bipolar Transistor) module with specific features and characteristics. Here’s a breakdown of its potential applications, electrical and mechanical features, as well as its maximum ratings: Potential Applications: Electrical Features: Mechanical Features: Maximum Ratings and Characteristics (Tc=25°C unless specified): Additional Information: Notes:
BussMan FWH-400A FUSE Features: General Information: Voltage Rating: Maximum Ratings and Characteristics (Tc=25°C unless specified): Consultation:
Power Integrations is sampling a family of plug-and-play gate drivers for 62 mm SiC MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation. SCALE-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents. The […]
Mitsubishi QM150DY-H IGBT Module Specifications Discover the cutting-edge features of the Mitsubishi QM150DY-H IGBT Module, a powerful solution for various industrial applications. Key Features: Performance Details: Applications: Versatile Design: Reliable Performance: