#AP9985GM APEC AP9985GM Novus Gallium 10 A, 40 V, 0.015 olim, N-CIVUS, SI, POTESTAS; mosfet, ROHS OBEDIENS, SOP-8, FET Consilium generale Power, AP9985GM imagines, AP9985GM pretium, #AP9985GM elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/ap9985gm.html
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Manufacturer Part Number: AP9985GM
Pars Vita Cycle Code: Contact Manufacturer
Ihi Manufacturer: POTESTATEM ELECTRONICS PROVECTUS PHARMACEUTICALS INC
Pars Package Code: SOT
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G8
Pin Count: V
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Provectus Power Electronics Corp
Risk Rank: 5.71
Additional Feature: Ultra LACESSA
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 10 A
Exhaurire-fonte Resistentia-Max: 0.015 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PDSO-G8
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Gallium Applicationem: SWITCHING
Gallium Element Material: SILICON
Gallium 10 A, 40 V, 0.015 olim, N-CIVUS, SI, POTESTAS; mosfet, ROHS OBSEQUENS, SOP-8, FET Consilium Generale Potestas
Pars Vita Cycle Code: Contact Manufacturer
Ihi Manufacturer: POTESTATEM ELECTRONICS PROVECTUS PHARMACEUTICALS INC
Pars Package Code: SOT
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G8
Pin Count: V
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Provectus Power Electronics Corp
Risk Rank: 5.71
Additional Feature: Ultra LACESSA
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 10 A
Exhaurire-fonte Resistentia-Max: 0.015 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PDSO-G8
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Gallium Applicationem: SWITCHING
Gallium Element Material: SILICON
Gallium 10 A, 40 V, 0.015 olim, N-CIVUS, SI, POTESTAS; mosfet, ROHS OBSEQUENS, SOP-8, FET Consilium Generale Potestas