International Rectifier IRF9362TRPBF In-Stock

Datasheets: IRF9362PBFProduct Photos:8-SOIC8-SOIC8-SOICProduct Training Modules High voltage Integrated Circuits (HVIC Gate Coegi) Design Resources: IRF9362PBF Saber ModelIRF9362PBF Spice ModelPCN Conventus / Origin:mosfet Backend Wafer Processing 23/Oct/2013Standard Package:4,000Category:Discrete Gallium ProductsFamily:FETs - ArraysSeries:HEXFET®Packaging:Tape & Reel (TR)FET Type:2 P-Canale (Dual)FET Pluma:GateDrain Logica Level ad Source voltage (Vdss):30Vurrent – Continuous Exhaurire (Id) @ 25° C:8ARds On (Max) @ Id, Vgs:21 mOhm @ 8A, 10VVgs(th) (Max) @ Id:2.4V @ 25µAGate Charge (Qg) @ Vgs:39nC @ 10VInput Capacitance (Ciss) @ Vds:1300pF @ 25VPower – Max:2WMounting Type:Super- MountPackage / Case:8-SOIC (0.154″, 3.90mm Latitudo) Supplier Fabrica Package:8-SODynamic Catalog:P-Channel Logica Level Gate FETsOther Names: IRF9362TRPBFTR #IRF9362TRPBF Internationalis Rectifier IRF9362TRPBF Nova Power Field-Effectus Gallium, 8A I (D), 30V, 0.021ohm, I-Element, P-Channel, Silicon, Metal-Oxid. Gallium FET, MS-012AA, HALOGEN LIBERI ET ROHS OBLIQUUS, SOP-8, IRF9362TRPBF pretium, IRF9362TRPBF pretium, #IRF9362TRPBF elit.
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Manufacturer Pars Number: IRF9362TRPBF
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 1.01
Power Field-Effect Transistor, 8A I (D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-Oxid. Gallium FET, MS-012AA, HALOGEN LIBERUM ET ROHS OBEDIENS, SOP-8