ROHM RTQ035N03 In-Stock

#RTQ035N03 ROHM RTQ035N03 Novae Potestatis Field-Effectus Gallium, 3.5A I (D), 30V, 0.077ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, TSMT6, 6 ACUS, RTQ035N03 imagines, RTQ035N03 pretium, #RTQ035N03 elit.
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Manufacturer Pars Number: RTQ035N03TR
Pbfree Code: Sic
Pars vitae Cycle Code: Non commendatur
Ihi Manufacturer: ROHM CO LTD
Sarcina Description: PAULLULUM FORMULA, R-PDSO-G6
Pin Count: V
ECCN Code: EAR99
Manufacturer: ROHM Gallium
Risk Rank: 7.87
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 3.5 A
Exhaurire Current-Max (ID): 3.5 A
Exhaurire-fonte Resistentia-Max: 0.077 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
JESD-30 Codex: R-PDSO-G6
JESD-609 Codex: e1
Humorem sensitivum Level: 1
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem Reflow Temperature (Cel): 260
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 1.25 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Finish: Tin/Silver/Aeris (Sn96.5Ag3.0Cu0.5)
Terminatio forma: CONCAVUM WING
Terminatio Position: DUPLEX
Tempus
Potestas Field-Effectus Transistor, 3.5A I(D), 30V, 0.077ohm, 1-Element, N-Channel, Silicon, oxydatum Metallicum semiconductor FET, TSMT6, 6 ACUS