#SK60GB123 Semikron SK60GB123 New TRANSISTOR IGBT POTENTIA MODULE DIMIDIUM BRIDGE 1.2kV V(BR)CES 40A I(C), SK60GB123 imagines, SK60GB123 pretium, #SK60GB123 supplementum
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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SK60GB123 Features
.Compact design
.One stupra adscendens
. Calor translatio et solitudo per directum aluminium oxydatum ceramic aeris religatum (DCB)
.High brevi circuitu facultatem
.Low humilis temperatus dependens et cauda current
Typical Applications *
.Switching (non lineari usu)
.Reverse
.Switched modus virtutis commeatus
.UPS
.One stupra adscendens
. Calor translatio et solitudo per directum aluminium oxydatum ceramic aeris religatum (DCB)
.High brevi circuitu facultatem
.Low humilis temperatus dependens et cauda current
Typical Applications *
.Switching (non lineari usu)
.Reverse
.Switched modus virtutis commeatus
.UPS
Maximum ratings et habitudines,
.Absolute maximum ratings (T = sine nisi certa XXV ° C)
Collector-Emitte voltage Vces: 1200V
Porta-voltage EDITOR VGES: ± 20V
Collector current IC: 40A
Bibliotheca current Icp: 100A
Bibliotheca-voltage EDITOR VCES: 2500V
Tj caliditas operating coniunctas: CL + F
Tstg repono temperatus: -40 ° C ad CXXV +
TRANSISTOR IGBT POTESTAS MODULE MEDIUS PONS 1.2kV V(BR)CES 40A I(C)
Shunlongwei Inspeximus Omnem SK60GB123 Ante Navim, Omnes SK60GB123 cum 6 mensibus warantia.