STD1HNC60 in-Stock

Renovatio: March 6, 2024 Tags:electronicicTechnology

#STD1HNC60 ST STD1HNC60 Novum 2A, 600V, 5ohm, N-CIVUS, SI, POTESTAS, mosfet, TO-252AA, TO-252, DPAK-3, STD1HNC60 imagines, STD1HNC60 pretium, #STD1HNC60 elit.
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Manufacturer Pars Number: STD1HNC60
Rohs Code: Sic
Pars Vita Cycle Code: Obsolete
Ihi Manufacturer: STMICROELECTRONICS
Pars Package Code: TO-252AA
Sarcina Description: TO-252, DPAK-3
Pin Count: V
Manufacturer: STMicroelectronics
Risk Rank: 5.68
NIVIS NIVIS Energy Rating (Eas): 120 mJ
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 2 A
Exhaurire Current-Max (ID): 2 A
Exhaurire-fonte Resistentia-Max: 5 Ω
FET Technology: METAL-OXIDUM Gallium
JEDEC, XCV Code: TO-95AA
JESD-30 Codex: R-PSSO-G2
JESD-609 Codex: e3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 50 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Superficiem monte: ETIAM
Terminatio Finis: Matte plumbi (Sn)
Terminatio forma: CONCAVUM WING
Terminatio Position: Unam
Tempus
2A, 600V, 5ohm, N-CIVUS, SI, POTESTAS, mosfet, TO-252AA, TO-252, DPAK-3 .