#SIHF22N60E-E3 VISHAY SIHF22N60E-E3 Novae Potestatis Field-Effectus Gallium, 21A I (D), 600V, 0.18ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, TO-220AB, ROHS OBSEQUENS, TO-220, FULLPAK-3, SIHF22N60E-E3 imagines, SIHF22N60E-E3 pretium, #SIHF22N60E-E3 supplementum
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/sihf22n60e-e3.html
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Manufacturer Part Number: SIHF22N60E-E3
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: VISAY INTERTECHNOLOGY INC
Sarcina Description: LABIUM MONTE, R-PSFM-T3
Manufacturer: Vishay Intertechnologiae
Risk Rank: 1.09
NIVIS NIVIS Energy Rating (Eas): 367 mJ
Si Connection, vagae
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 21 A
Exhaurire Current-Max (ID): 21 A
Exhaurire-fonte Resistentia-Max: 0.18 Ω
FET Technology: METAL-OXIDUM Gallium
JEDEC-95 Codex: TO-220AB
JESD-30 Codex: R-PSFM-T3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 227 W
Exhaurire Pulsed Current-Max (IDM): DC A
Subcategoria: FET Generalis Propositum Power
Campo monte: No such
Terminatio forma: PER FORAMEN
Terminatio Position: Unam
Tempus
Potentia Field-Effectus Transistor, 21A I(D), 600V, 0.18ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, TO-220AB, ROHS OBSEQUENS, TO-220, FULLPAK-3 .
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: VISAY INTERTECHNOLOGY INC
Sarcina Description: LABIUM MONTE, R-PSFM-T3
Manufacturer: Vishay Intertechnologiae
Risk Rank: 1.09
NIVIS NIVIS Energy Rating (Eas): 367 mJ
Si Connection, vagae
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 21 A
Exhaurire Current-Max (ID): 21 A
Exhaurire-fonte Resistentia-Max: 0.18 Ω
FET Technology: METAL-OXIDUM Gallium
JEDEC-95 Codex: TO-220AB
JESD-30 Codex: R-PSFM-T3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 227 W
Exhaurire Pulsed Current-Max (IDM): DC A
Subcategoria: FET Generalis Propositum Power
Campo monte: No such
Terminatio forma: PER FORAMEN
Terminatio Position: Unam
Tempus
Potentia Field-Effectus Transistor, 21A I(D), 600V, 0.18ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, TO-220AB, ROHS OBSEQUENS, TO-220, FULLPAK-3 .