Mitsubishi CM150MXUD-24T New IGBT Module

Sales Email: sales@shunlongwei.com

The Mitsubishi CM150MXUD-24T is a power module commonly used in high-power motor drives, power supplies, and welding equipment. It is designed to provide high performance and reliability with low power loss. Here are some key features and specifications of the CM150MXUD-24T module:

Features:

Dual diode configuration for lower switching loss and improved efficiency.
Integrated thermistor for temperature monitoring and protection against overheating.
Nickel-plated tab terminals for enhanced connectivity.
RoHS Directive compliant.
Specifications:

Collector current (IC): 150A
Collector-emitter voltage (VCES): 1200V
Maximum junction temperature (Tvj max): 175°C
Configuration: Dual switch (half-bridge)
Applications: AC motor control, motion/servo control, power supply, etc.
Option: PC-TIM (Phase Change Thermal Interface Material) pre-apply
Maximum Ratings:

VCES (Collector-emitter voltage, G-E short-circuited): 1200V
VGES (Gate-emitter voltage, C-E short-circuited): ±20V
IC (Collector current, DC, TC=145°C): 150A
ICRM (Pulse, Repetitive): 300A
Pt ot (Total power dissipation, TC=25°C): 1610W
Visol (Isolation voltage, Terminals to base plate, RMS, f=60Hz, AC 1 min): 4000V
Tvj max (Maximum junction temperature, Instantaneous event (overload)): 175°C
Tc max (Maximum case temperature): 150°C
Tvj op (Operating junction temperature, Continuous operation (under switching)): -40 ~ +150°C
Tstg (Storage temperature): -40 ~ +150°C
Electrical Characteristics (Tv j=25°C, unless otherwise specified):

ICES (Collector-emitter cut-off current, VCE=VCES, G-E short-circuited): 1.0mA
IGES (Gate-emitter leakage current, VGE=VGES, C-E short-circuited): 0.5μA
VG(th) (Gate-emitter threshold voltage, IC=15mA, VCE=10V): 5.4 ~ 6.6V
trr (Reverse recovery time): 400ns
Qrr (Reverse recovery charge): 15μC
CEon (Turn-on switching energy per pulse): 11.6mJ
CEoff (Turn-off switching energy per pulse): 15.7mJ
Err (Reverse recovery energy per pulse): 6.8mJ
RCC’+EE’ (Internal lead resistance, Main terminals-chip, per switch, TC=25°C): 0.2mΩ
rg (Internal gate resistance, per switch): 3.0Ω
Mechanical Characteristics:

Mounting torque (Main terminals M5 screw): 2.5 ~ 3.5 N·m
Mounting torque (Mounting to heat sink M6 screw): 3.5 ~ 4.5 N·m
Creepage distance (Terminal to terminal): 18.4mm
Creepage (Terminal to base plate): 21.1mm
Clearance (Terminal to terminal): 9.6mm
Clearance (Terminal to base plate): 16.7mm
Flatness of base plate (On the centerline): ±0 ~ +200μm
Please note that these specifications are based on the given values and conditions