#AP0503GMA APEC AP0503GMA New Gallium 75 A, 30 V, 0.0042 olim, N-CIVUS, SI, POTESTAS; mosfet, ROHS OBEDIENS, APAK-5, FET Consilium generale Power, AP0503GMA imagines, AP0503GMA pretium, #AP0503GMA elit.
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Email: [inscriptio protected]
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Email: [inscriptio protected]
https://www.slw-ele.com/ap0503gma.html
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Manufacturer Part Number: AP0503GMA
Pars Vita Cycle Code: Contact Manufacturer
Ihi Manufacturer: POTESTATEM ELECTRONICS PROVECTUS PHARMACEUTICALS INC
Sarcina Description: PAULLULUM FORMULA, R-PSSO-G4
Pin Count: V
ECCN Code: EAR99
Manufacturer: Provectus Power Electronics Corp
Risk Rank: 5.71
NIVIS NIVIS Energy Rating (Eas): 29 mJ
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 75 A
Exhaurire-fonte Resistentia-Max: 0.0042 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PSSO-G4
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: Unam
Transistor Application: SWITCHING
Gallium Element Material: SILICON
Gallium 75 A, 30 V, 0.0042 olim, N-CIVUS, SI, POTESTAS; mosfet, ROHS OBEDIENS, APAK-5, FET Consilium Generale Potestatis
Pars Vita Cycle Code: Contact Manufacturer
Ihi Manufacturer: POTESTATEM ELECTRONICS PROVECTUS PHARMACEUTICALS INC
Sarcina Description: PAULLULUM FORMULA, R-PSSO-G4
Pin Count: V
ECCN Code: EAR99
Manufacturer: Provectus Power Electronics Corp
Risk Rank: 5.71
NIVIS NIVIS Energy Rating (Eas): 29 mJ
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (ID): 75 A
Exhaurire-fonte Resistentia-Max: 0.0042 Ω
FET Technology: METAL-OXIDUM Gallium
JESD-30 Codex: R-PSSO-G4
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Sarcina Style: PAULLULUM
Verticitatem / Channel Type: N-CURSUS
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Superficiem monte: ETIAM
Terminatio forma: CONCAVUM WING
Terminatio Position: Unam
Transistor Application: SWITCHING
Gallium Element Material: SILICON
Gallium 75 A, 30 V, 0.0042 olim, N-CIVUS, SI, POTESTAS; mosfet, ROHS OBEDIENS, APAK-5, FET Consilium Generale Potestatis