IRL2910PBF
#IRL2910PBF Rectifier Internationalis IRL2910PBF Nova IRL2910PBF Power Field-effectus Gallium, 55AI(D), 100V, 0.03ohm, I-Element, N-Channel, Silicon, Metal-Oxid. Gallium FET, AD-220AB, INTRODUCTIO FASCICULUS-III LIBERI; IRL3PBF , IRL2910PBF pretium, IRL2910PBF pretium, #IRL2910PBF elit
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Pars Number: IRL2910PBF
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: Infineon AG technologiae
Sarcina Description: LABIUM MONTE, R-PSFM-T3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 0.75
Additional Feature: AVALANCHE RATED, SUMMA FIDES
NIVIS NIVIS Energy Rating (Eas): 520 mJ
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 48 A
Exhaurire Current-Max (ID): 55 A
Exhaurire-fonte Resistentia-Max: 0.03 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
JEDEC-95 Codex: TO-220AB
JESD-30 Codex: R-PSFM-T3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Temperature-Min operating: -55 °C
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 150 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Campo monte: No such
Terminatio forma: PER FORAMEN
Terminatio Position: Unam
Tempus
Potestas Field-Effectus Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-canale, Silicon, Metallum Oxide Semiconductor FET, AD-220AB, PACEM PACKAGE-3
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: Infineon AG technologiae
Sarcina Description: LABIUM MONTE, R-PSFM-T3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 0.75
Additional Feature: AVALANCHE RATED, SUMMA FIDES
NIVIS NIVIS Energy Rating (Eas): 520 mJ
Causa Connection: ELIX
Configurationis: una cum inaedificata Diode
DS Naufragii voltage-Min: D V
Exhaurire Current-Max (Abs) (ID): 48 A
Exhaurire Current-Max (ID): 55 A
Exhaurire-fonte Resistentia-Max: 0.03 Ω
FET Technology: METAL-OXIDUM SEMICONDUCTOR
JEDEC-95 Codex: TO-220AB
JESD-30 Codex: R-PSFM-T3
Elementa autem Number: I
Numerus terminales: VII
Modus operandi: DE AMPLIFICATIONE INSTITUTUM
Temperature operating-Max CL ° F
Temperature-Min operating: -55 °C
Sarcina Corpus Material: Plastic / EPOXY
Figura autem sarcina: ORTHOGONIUS
Package Penicullus: LABIUM MONTE
Apicem reflow Temperature (Angla): Nihil omnino mercedis
Verticitatem / Channel Type: N-CURSUS
Potestas Dissipation-Max (Abs): 150 W
Exhaurire Pulsed Current-Max (IDM): DC A
Status absolute, non secundum quid
Subcategoria: FET Generalis Propositum Power
Campo monte: No such
Terminatio forma: PER FORAMEN
Terminatio Position: Unam
Tempus
Potestas Field-Effectus Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-canale, Silicon, Metallum Oxide Semiconductor FET, AD-220AB, PACEM PACKAGE-3
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