the Infineon FS150R06KL4_B4 IGBT (Insulated Gate Bipolar Transistor) module. Here’s a breakdown of the key specifications:
- Collector-Emitter Voltage (Vces): The maximum voltage that can be applied between the collector and emitter terminals of the IGBT is 600 volts.
- Continuous DC Collector Current: The maximum continuous current the IGBT can handle without exceeding its specifications is 150 amperes.
- Repetitive Peak Collector Current (ICRM): This is the maximum current that the IGBT can handle in repetitive peak conditions. It’s rated at 300 amperes.
- Total Power Dissipation (Ptot): The maximum power dissipation, or heat, that the IGBT module can handle without exceeding its specifications is 570 watts.
- Gate-Emitter Peak Voltage (VGES): The maximum peak voltage that can be applied between the gate and emitter terminals of the IGBT is +/-20 volts.
- Temperature Under Switching Conditions (Tvj op): The operating temperature range for the IGBT module under switching conditions is from -40°C to 150°C. This means it can operate within this temperature range while switching or being actively used.
These specifications are essential for designing and using the IGBT module in various applications, ensuring that it operates within its safe and specified limits.