Datasheets:IRFS(L)4115PBFProduct Photos:TO-263Product Training ModulesHigh voltage Integrated Circuits (HVIC Gate Coegi) PCN Conventus / Origin:mosfet Backend Wafer Processing 23/Oct/2013Standard Package:800Category:Discrete Gallium ProductsFamily:FETs - SingleSeries: HEXFET®Packaging: Tape & Reel (TR)FET Type:mosfet N-Channel, Metal OxideFET Feature:StandardDrain ad Source voltage (Vdss): 150VCurrent – Continuous Exhaurire (Id) @ 25° C:195A (Tc)Rds On (Max) @ Id, Vgs:12.1 mOhm @ 62A, 10VVgs(th) (Max) @ Id:5V @ 250µAGate Charge ( Qg) @ Vgs:120nC @ 10VInput Capacitance (Ciss) @ Vds:5270pF @50VPower - Max:375WMounting Type:Superfaciem MountPackage / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263ABSupplier Fabrica Package:D2PAKDynamic Catalogue:N-Channel Standard FETsOther Names:IRFS4115TRLPBFTR #IRFS4115TRLPBF Rectifier Internationalis IRFS4115TRLPBF Nova Power Field-Effectus Gallium, 99A I (D), 150V, 0.0121ohm, I-Element, N-Channel, Silicon, Metal-oxide Gallium FET, TO-263AB, PLUMBUM LIBERUM, PLASTICUM, D2PAK-3, IRFS4115TRLPBF pretium, IRFS4115TRLPBF pretium, #IRFS4115TRLPBF elit.
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Pars Number: IRFS4115TRLPBF
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Sarcina Description: PAULLULUM FORMULA, R-PSSO-G2
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 0.81
Potentia Field-Effectus Transistor, 99A I(D), 150V, 0.0121ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, TO-263AB, PLUMBUM, PLASTICUM, D2PAK-3
Rohs Code: Sic
Vita parte CIRCUMITUS Code: Active
Ihi Manufacturer: AG INFINEON TECHNOLOGIES
Sarcina Description: PAULLULUM FORMULA, R-PSSO-G2
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 0.81
Potentia Field-Effectus Transistor, 99A I(D), 150V, 0.0121ohm, I-Element, N-Channel, Silicon, oxydatum Metallicum Gallium FET, TO-263AB, PLUMBUM, PLASTICUM, D2PAK-3