#CM1200HC-66H Mitsubishi CM1200HC-66H Nova Mitsubishi 3rd-Version HVIGBT (High voltage Porta insulata Bipolar Gallium) Moduli 1200A/3300V/IGBT/1U;, #CM1200HC_66H
CM1200HC-66H Features
● IC…………………………………………………………. 1200A
● VCES ……………………………………………………. 3300V
Insulated Type
●1-elementum in Pack
AISiC Baseplate
VCES Collector-emittetor voltage VGE = 0V, Tj = 25°C 3300V
VGES Porta-emitte intentionem VCE = 0V, Tj = 25°C±20 V
IC Collector currentis TC = 100°C 1200A
ICM Collector vena Pulsus 2400A
PC (nota 3) Maxima vis dissipationis TC = 25°C, pars IGBT 14700W
Tj Junction temperatus -40 ~ +150 °C
Top Operating temperatus -40 ~ +125 °C
Tstg PRAECLUSIO temperatus -40 ~ +125 °C
Viso Isolatio voltage RMS, sinusoidalis, f = 60Hz, t = 1min. 6000V
tpsc Maximum brevi circuit pulsus latitudo VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C 10µs
ELECTRICAL proprietatibus
ICES Collector abscise currentis VCE = VCES, VGE = 0V, Tj = 25°C 15 mA
VGE(th) Limen portae emittentis intentionis IC = 120mA, VCE = 10V, Tj = 25°C 5.0~7.0V
IGES Porta lacus curren VGE = VGES, VCE = 0V, Tj = 25°C 0.5 mA
Cies Input capacitatem VCE = 10V, f = 100kHz 180 nF
Qg Summa portae crimen VCC = 1650V, IC = 1200A, VGE = 15V, Tj = 25°C 8.6 µC
Adscendens torque M6 : Adscendens cochlea 3.0~6.0 mm
Missam 1.5kg