#CM1200HC-66H Mitsubishi CM1200HC-66H Mitsubishi Versi Ketiga HV BaharuIGBT (Tinggi voltan Bipolar Pintu Bertebat Transistor) Modul 1200A/3300V/IGBT/1U;, #CM1200HC_66H
Ciri CM1200HC-66H
● IC………………………………………………………. 1200A
● VCES ……………………………………………………. 3300V
● Jenis Tertebat
● 1-elemen dalam Pek
● Papan Dasar AISiC
Pengumpul-pemancar VCES voltan VGE = 0V, Tj = 25°C 3300V
VGES Voltan pemancar get VCE = 0V, Tj = 25°C ±20 V
IC TC arus pengumpul = 100°C 1200A
Nadi semasa Pemungut ICM 2400A
PC (Nota 3) Pelesapan kuasa maksimum TC = 25°C, bahagian IGBT 14700W
Suhu simpang Tj –40 ~ +150 °C
Suhu Operasi Teratas –40 ~ +125 °C
Tstg Suhu penyimpanan –40 ~ +125 °C
Voltan Pengasingan Viso RMS, sinusoidal, f = 60Hz, t = 1min. 6000V
tpsc Maksimum pendek litar lebar nadi VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C 10µs
KARAKTERISTIK ELEKTRIK
Arus potong pengumpul ICES VCE = VCES, VGE = 0V, Tj = 25°C 15 mA
VGE(th) Voltan ambang pemancar get IC = 120mA, VCE = 10V, Tj = 25°C 5.0~7.0V
Arus kebocoran Gerbang IGES VGE = VGES, VCE = 0V, Tj = 25°C 0.5 mA
Kemuatan input VCE = 10V, f = 100kHz 180 nF
Qg Jumlah cas get VCC = 1650V, IC = 1200A, VGE = 15V, Tj = 25°C 8.6 µC
Tork pelekap M6 : Skru pelekap 3.0~6.0 mm
Jisim 1.5kg